logo

RFPA5026 Datasheet, RF Micro Devices

RFPA5026 amplifier equivalent, class ab heterojunction bipolar transistor (hbt) power amplifier.

RFPA5026 Avg. rating / M : 1.0 rating-11

datasheet Download

RFPA5026 Datasheet

Features and benefits


* P1dB=33dBm at 5V
* 802.11g 54Mb/s Class AB Performance
* POUT=25dBm at 2.5% EVM, VCC 5V, 680mA
* On-Chip Output Power Detector
* Input Prematched In.

Application


* 802.16 WiMAX Driver or Output Stage
* 5GHz 802.11 WiFi and ISM Applications RFIN RFPA5026 Vbias Active Bia.

Description

RFMD’s RFPA5026 is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor (HBT) power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliabili.

Image gallery

RFPA5026 Page 1 RFPA5026 Page 2 RFPA5026 Page 3

TAGS

RFPA5026
class
Heterojunction
Bipolar
Transistor
HBT
power
amplifier
RFPA5200
RFPA5201
RFPA5201E
RF Micro Devices

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts